New Electronics

First test results obtained on 20nm pitch metal line structure

imec, the research and innovation hub, has announced the first electrical test (e-test) results obtained on 20nm pitch metal line structures patterned after single-exposure High NA EUV lithography.
siliconsemiconductor

Imec demonstrates electrical yield for 20nm pitch metal lines obtained with High NA EUV single patterning

First electrical tests at 20nm pitch present a next milestone in validating the High NA extreme ultraviolet (EUV) patterning ecosystem. This week at SPIE Advanced Lithography + Patterning, imec ...
IEEE

Planar Transmission Line Structures as Possible On-Chip Interconnects in Deep Sub-Micron (DSM) Processes

Abstract: The paper proposes the possible use of planar transmission line structures (i.e. coplanar, microstrip, stripline etc.) as on-chip interconnects in deep sub-micron (i.e. 65 nm) as it is ...
Electronics Weekly

Lithography firsts with single-print high-numerical-aperture EUV

Belgian research lab Imec has revealed advances single-print high numerical aperture EUV lithography at the ‘SPIE Photomask Technology + EUV Lithography’ conference in Monterey California: Line ...
IEEE

Thermal stress and debonding in Cu/low k damascene line structures

Abstract: In this study, the thermal stress and debond characteristics of Cu damascene structures were investigated using X-ray diffraction and 3D finite element analysis (FEA). First, X-ray ...