Abstract: The benefits of using discrete Silicon Carbide (SiC) integrated passive devices (IPDs) in the pre-match component of high-power RF amplifiers is examined. Through accurate modeling and ...
Model helps engineers quantify benefits of silicon carbide MOSFETs in board-level circuit simulation
Cree Inc. has expanded design-in support for its commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Cree Inc. has expanded design-in support for its ...
Abstract: The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The growth rate and uniformity of epitaxial film are two critical evaluation criteria of epitaxial ...
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