An extensive range of insulating thin films are utilized in modern VLSI circuits providing electrical isolation between conducting regions within a device and as a final capping passivation layer.

This article describes the properties and applications of Graphenea's range of CVD graphene films on silicon and silicon dioxide substrates. Monolayer graphene is produced using the CVD process on a ...

Abstract: High-purity ZnO nanowire networks were directly synthesized on SiO2/Si substrates via catalyst-free chemical vapor deposition. we grow single-crystal ZnO nanowire networks through the ...

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Various thin-film deposition tools, including PVD (e-beam & thermal evaporators, DC & RF magnetron (reactive) sputterers) and CVD (APCVD of graphene, Si oxidation, PECVD of SiO2 and SiNx). Available ...

Although low-k dielectrics with k values in the range of 3.0 have already been introduced into back-end-of-the-line pilot production, the ultimate ultra-low-k material that complies with all the ...

Depositing the gate oxide of GaN MOSFETs by mist CVD delivers a hike in field-effect mobility For GaN MOSFETs, another requirement is a high threshold voltage, as this ensures that if these devices ...

ABSTRACT: By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we ...

Owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different ...

ABSTRACT: By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we ...