Electronics Weekly

GaN LEDs and power transistors on the same chip

Gallium nitride-based LEDs and power transistors can be made on the same IC, according to scientists from Cornell University and the Polish Academy of Sciences. The trick is to used both sides of the ...
The Engineer

Research advances diamond transistors for high-power applications

Glasgow University researchers have led work that could lead to a new generation of diamond-based transistors for use in high-power electronics. The team has found a new way to use diamond as the ...
sciencex

Ultrathin Sn-doped Ga2O3 for power field-effect transistors

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
Semiconductor Engineering

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
EurekAlert!

GaN transistors and high-power amplifiers for millimeter wave satellite communications

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...
The Hindu

IISc researchers develop power switch to replace traditional silicon-based transistors

Indian Institute of Science (IISc) researchers have developed a fully indigenous gallium nitride (GaN) power switch that can have potential applications in systems like power converters for electric ...
Semiconductor Engineering

Driving Cost Lower and Power Higher With GaN

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...