Majority of the silicon with-in a design is occupied by memories. Memories are more prone to failures than logic due to their density. Several techniques have been established to target and detect ...

Abstract: Testing magnetoresistive random access memory (MRAM) presents several challenges, particularly in scaled technology nodes. One major challenge is the increased interconnect resistance from ...

During the testing process, the input data is written to the memory locations, and then read back to verify that the correct data has been written to the memory. This process is repeated for all ...

“Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the most promising candidates to replace conventional embedded memory such as Static RAM and Dynamic RAM. However, due to the ...