Abstract: Press-pack IGBT devices have become the preferred power devices for GW-level VSC-HVDC systems due to their advantages such as high power density per unit volume, doublesided heat dissipation ...
IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
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