Abstract: Temperature Shock Test (TST) is a basic test for Insulated Gate Bipolar Transistor (IGBT) modules, which can effectively reveal the problems existing in device packaging. In engineering, the ...

Abstract: To develop a high-power and small-size pulse power source, the mechanism of maximum-current limitation for a 10-kV silicon carbide (SiC)-insulated-gate bipolar transistor (IGBT) device ...

Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...

Compared with GTOs and IGCTs, IGBT modules offer the advantage of easier driving due to the MOS-gate and easier cooling due to a fully isolated package. Traction, industrial drive, and pulse power ...

Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high perfor- mance and reliable motor drive ...

TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...