We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrifificial layer. We used 48% ...

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Abstract: This paper introduces a novel and simple etching technique that utilizes a mixture of sulfuric acid (H2 SO4) and hydrofluoric acid (HF). This method selectively etches silicon dioxide (SiO2) ...