Abstract: The paper introduces the formation, development, and future exploration of FinFET. It introduces the invention history, the formation and working principle of conventional bulk FinFET with ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

The 16nm FinFET node has introduced several new challenges in the IC design community. In addition to the complexity of power-noise and electromigration (EM) verification, thermal reliability has ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

TSMC has launched its “TSMC University FinFET Program”, aimed at developing future IC design talent for the industry and empowering academic innovation around the world. The program will provide broad ...

Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, India Integrating a high-k dielectric into an InGaAs-SOI FinFET device is a complex process ...